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Christopher Hemingway (born 1969, United Kingdom) is a British artist. His work is concerned with political history, specifically with the art and politics of post-1945 France.

Hemingway’s work has been widely exhibited and he has won awards from the Royal Academy and the Art Fund. He was a 2006-2007 J. Paul Getty Creative Writing Fellow.

In 2008 he curated the group exhibition Situated Experience.

He is Associate Professor of Fine Art at the University of St Andrews and is a curator at the Royal Academy.

Selected exhibitions
2011 “The Dwellers” solo exhibition, Athens, Greece.
2010 “Situated Experience: The Art of Resistance, Modernism and Desire” Modern and Contemporary Art Gallery, Glasgow, UK.
2009 “This Place” solo exhibition, Trondheim Kunstforening, Trondheim, Norway.


External links
Christopher Hemingway at Galerie Figge

Category:1969 births
Category:Living people
Category:20th-century British painters
Category:21st-century British painters
Category:British male painters
Category:Alumni of the University of St AndrewsUse your head like Sadio and subscribe to the Liverpool FC newsletter Sign me up Thank you for subscribing We have more newsletters Show me See our privacy notice Invalid Email

Ander Herrera has thrown down the gauntlet to Phil Jones by saying he can end up just as big a player as the Manchester United defender.

His latest comments on the world of football came after speculation that the Red Devils boss Louis van Gaal is preparing to bring in an attacking midfielder when he takes over at Old Trafford from David Moyes at the end of the season.

And the Manchester-born star thinks the former United defender, who he recently admitted would be a great addition to the Blues team, could go on to achieve similar things to what he has already done with the Red Devils.

“Obviously if


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Conventional non-volatile memory (NVM) structures of the prior art (e.g., NVM cells, NVM transistor) use a gate dielectric stack of silicon dioxide or silicon nitride. While these gate dielectric materials provide an excellent interface between the gate electrode and the cell channel, they exhibit a relatively low dielectric constant (k) of about 3.9-4.2.
Efforts have been made to reduce the equivalent oxide thickness (EOT) and increase the thickness of the dielectric to enhance the charge retention capabilities of a memory cell. For instance, EPO applications EP-A-1 022 793 and EP-A-1 022 792 disclose High-k gate dielectric stacks. Furthermore, U.S. Pat. No. 6,420,496 and U.S. Pat. No. 6,420,496 disclose high dielectric materials. However, the related art still suffers from a number of disadvantages. For example, as the EOT is decreased, electron tunneling can create a severe reliability issue. This electron tunneling can be induced by several factors including Fowler-Nordheim tunneling, direct tunneling, and hot carrier injection. The above problems are discussed more thoroughly below in conjunction with FIGS. 1-4.
FIG. 1 illustrates a fragmentary cross sectional elevation view of a semiconductor device 10 that can be formed utilizing conventional technology. Die 10


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